PART |
Description |
Maker |
HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HY |
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M x 72 Bit ECC DRAM Module unbuffered 4M x 64 Bit DRAM Module unbuffered 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组 GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
|
Siemens Semiconductor G... Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40 4M X 4 OTHER DRAM, 70 ns, PDSO26 16M X 1 EDO DRAM, 60 ns, PDSO24 4M X 4 OTHER DRAM, 50 ns, PDSO26 16K X 4 CACHE SRAM, 10 ns, PDIP24
|
SIEMENS AG
|
MT4C16270 |
DRAM 256K X 16 DRAM 5V / EDO PAGE MODE
|
Micron Technology
|
IS41LV16256B-35KL IS41LV16256B-60T |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K X 16 EDO DRAM, 60 ns, PDSO40 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K X 16 EDO DRAM, 35 ns, PDSO40
|
Integrated Silicon Solu... Integrated Silicon Solution, Inc.
|
MSM51V4265 MSM51V4265E MSM51V4265E-70TS-K |
256K X 16 EDO DRAM, 70 ns, PDSO40 DRAM / FAST PAGE MODE TYPE 262,144-Word 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
LAPIS SEMICONDUCTOR CO LTD OKI electronic componets
|
HYB314405BJL-70 HYB314405BJL-60 HYB314405BJL-50 HY |
1M x 4 Bit EDO DRAM 3.3 V 50 ns 1M x 4 Bit EDO DRAM 3.3 V 60 ns -1M x 4-Bit Dynamic RAM 1M x 4 Bit EDO DRAM 3.3 V 70 ns 1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
UT51C164 UT51C164JC-35 UT51C164MC-60 UT51C164JC-40 |
256K X 16 BIT EDO DRAM
|
UTRON Technology ETC[ETC]
|
HYB514175BJ-60 HYB514175BJ-55 HYB514175BJ-50 Q6710 |
256k x 16 Bit EDO DRAM 5 V 50 ns 256k x 16 Bit EDO DRAM 5 V 60 ns 256k x 16 Bit EDO DRAM 5 V 55 ns 256k x 16-Bit EDO-DRAM
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
AS4LC256K16EO-60JC AS4LC256K16EO-60TC |
3.3V 256K X 16 CMOS DRAM (EDO)
|
Alliance Semiconductor ...
|
AS4C4M4E1Q AS4CM4E1Q-50 AS4CM4E1Q-60 AS4CM4EOQ AS4 |
Thick Film Chip Resistor - RMC 1 3.9 5% R 4米4的CMOS QuadCAS的DRAM(江户)家庭 4M X 4 CMOS Quad CAS DRAM (EDO) family 4M x 4 CMOS QuadCAS DRAM (EDO) family
|
Analog Devices, Inc. ALSC[Alliance Semiconductor Corporation]
|
HYM72V2005GU-60 HYM72V2005GU-50 HYM64V2005GU-60 HY |
3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module 2M x 72 Bit ECC DRAM Module unbuffered 2M x 64 Bit DRAM Module unbuffered 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module 2M X 72 EDO DRAM MODULE, 60 ns, DMA168
|
Siemens Semiconductor G... Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
K4E151611D-JL50 K4E151612D-TL50 |
1M X 16 EDO DRAM, 50 ns, PDSO42 1M X 16 EDO DRAM, 50 ns, PDSO44
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